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The figure shows a schematic of an optically pumped MAPbI3 whispering gallery mode (WGM) laser consisting of triangular MAPbI3 nanoplatelets, a SiO2 slit layer, and a diamond substrate. CREDIT © Science China Press |
Abstract:
Perovskite lasers have made rapid progress in developing a continuous-wave excited amplifier from a femtosecond pulse excited amplifier, which is considered an important step towards electrically excited amplifiers. After a continuous wave amplifier at room temperature, the next goal is to realize an electrically driven amplifier. In commercially available power injection lasers, traditional epitaxial grown single crystal semiconductors with large thermal conductivities κ and high charge carrier mobility m typically exhibit little resistive heating under large current flow. While perovskites have large and well-balanced charge carrier mobility, they experience small κ values. The thermal conductivity of MAPbI3 is 1–3 W m−1 K−1, which is lower than that of GaAs (50 W m−1 K−1). Therefore, heat converted from energy loss via non-radiative pathways cannot be removed effectively. This failure will increase the lasing threshold as the carriers occupy a wider energy range at higher temperatures, diluting the population inversion of any given transition along with other problems such as degradation and heat damage. The lowest electrical excitation threshold of a distributed feedback perovskite (DFB) laser will be as high as 24 mA cm−2. In addition, due to the high current injection in the conventional perovskite light-emitting diode architecture used for laser devices, the external quantum efficiency will be significantly limited under high current injection conditions due to Joule heating. Therefore, heat management is a barrier to developing electrically driven perovskite based lasers.
Efficient heat dissipation perovskite laser employs a diamond substrate with high thermal conductivity
Beijing, China | Posted April 14, 2023
In connection with this, a group of researchers, including Prof. Guo Hui Li, Prof. Sheng Wang Yu, Prof. Yanxia Cui from Taiyuan University of Technology, and Prof. Kaibo Zheng from Lund University, demonstrated a perovskite nanoplatelet laser on a diamond substrate that can efficiently remove heat generated during optical pumping. The demonstrated laser displays a Q factor of ~1962, gain threshold of 52.19 μJ cm−2. The tight optical confinement is also realized by introducing a thin layer of SiO gap between the nanoplatelets and the diamond substrate. The distribution of the electric field within the structure indicates that the wide SiO2 gap with a thickness of 200 nm results in a less pronounced leakage field on the diamond substrate, as well as suggesting better mode confinement in the MAPbI3 nanoplatelets. They evaluated heat dissipation in a perovskite nanoplatelet laser on a diamond substrate with temperature variations under optical pumping conditions. The laser has low pump density-dependent temperature sensitivity (~0.56 ± 0.01 K cm2 μJ−1) through incorporation of a diamond substrate. The sensitivity is one to two orders of magnitude lower than the values for previously reported perovskite nanowire lasers on glass substrates. The diamond substrate with high thermal conductivity allows the nanoplatelet laser to operate at high pump densities. This study could inspire the development of electrically driven perovskite lasers. This work is published in SCIENCE CHINA Materials (https://doi.org/10.1007/s40843-022-2355-6)
This work was supported by the National Natural Science Foundation of China (U21A20496, 61922060, 61775156, 61805172,12104334, 62174117, and 61905173), Key Research and Development Program of Shanxi Province (202102150101007), Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering Program (2022SX-TD020), Natural Science Foundation of Shanxi Province (20210302123154 and 20210302123169), Research Project Supported by Shanxi Scholarship Council of China (2021-033), Research Project Supported by Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering ( 2021SX-FR008), and Lvliang City Project Special Talent Introduction (Rc2020206 and Rc2020207). Guohui Li also acknowledges the support of the China Scholarship Council (202006935009).
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Guo Hui Li
Taiyuan University of Technology
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