Industry’s First 1200 V GaN-on-Sapphire Device Simulation Model Released by Transphorm
Transphorm, Inc.—the global leader in fundamentally superior and quantitatively outperforming GaN power semiconductors—today announced the availability of a 1200 V FET simulation model and preliminary data sheet.
The TP120H070WS FET is the only 1200 V GaN-on-Sapphire power semiconductor introduced to date, making this model the first of its kind. The release demonstrates Transphorm’s ability to support future automotive power systems as well as three-phase power systems typically used in the broad industrial, datacom and renewable energy markets. These applications will benefit from 1200 V GaN devices with higher power density and reliability along with equivalent or better performance at a more reasonable cost point than alternative technologies. Transphorm recently validated the higher performance capabilities of GaN devices in a 5 kW 900 V buck converter switching at 100 kHz. 1200 V GaN devices achieve 98.7% efficiency, exceeding production SiC MOSFETs of a similar rating.
The innovative 1200 V technology also underscores Transphorm’s leadership in GaN power conversion. Vertical integration, epitaxy proprietary and patented processes coupled with decades of engineering expertise allow companies to bring a portfolio of the highest performing GaN devices to market with four additional key differentiators: Manufacturing Capability, Drive Capability, Design Capability and Reliability.
PCIM 2023 attendees can learn more about 1200 V devices from Transphorm representatives in Hall 7, Booth 108 during 9 – 11 May.
Initial Device Model Specifications and Access
1200 V Transphorm technology is based on proven processes and mature technology, meeting the requirements of customer trust. The GaN-on-Sapphire process is in volume production today in the LED market. In addition, the 1200 V technology leverages the fundamentally superior and typically dead GaN platform used in the current Transphorm device portfolio.
The main device specifications of the TP120H070WS include:
- 70mΩRDS(on)
- Usually dead
- Efficient bidirectional current flow
- ±20 Vmax gate toughness
- The low 4V gate promotes noise immunity
- Zero QRR
- TO-247 3-lead package
Verilog-A device models are recommended for use with SIMetrix Pro v8.5 Circuit Simulator. The LTSpice model is under development and will be released in Q4 2023. Simulation modeling enables fast and efficient validation of power system designs while reducing design iterations, development time, and hardware investment.
Device model files and datasheets are available for download here: https://www.transphormusa.com/en/products/#models.
1200 V FET samples are expected in Q1 2024.
GaN Transphorm in Automotive Power Systems and Charging Ecosystems
While 1200 V GaN devices are the optimal solution for many market applications, they offer unique advantages for automotive systems.
The electric vehicle industry, especially at the higher kilowatt node for larger vehicles, is moving towards 800 V batteries in the second half of the decade. Thus, a 1200 V power conversion switch will be used to provide the required level of performance. Therefore, the Transphorm 1200 V platform is well positioned for success in next-generation onboard chargers, DC-to-DC converters, drive inverters, and pole charging systems.
For current model EVs that use 400 V batteries, Transphorm offers a normally dead 650 V SuperGaN AEC-Q101 compliant FET up to 175°C and in volume production.
“We are a leading power semiconductor company that demonstrates and delivers on the GaN promise,” said Umesh Mishra, CTO and Co-founder, Transphorm. “Our expertise brings unrivaled GaN devices to market that are setting new standards every day for system power density, performance, and cost. Our 1200 V technology is testament to the vision and innovative determination of our engineering team. We proved that GaN can easily play in the previously slated application markets for silicon carbide, which opens up a wide range of market adoption potential for our business and GaN in general.”
