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| Dual-function Perovskite Silicon-integrated Electrochemical Cell CREDIT OEA |
Abstract:
The new publication from Opto-Electronic Advances, 10.29026/oea.2023.220154 discusses the new design of perovskite electrochemical cells for light emission and light detection.
New design of perovskite electrochemical cells for light emission and light detection
Sichuan, China | Posted on May 12, 2023
Although perovskite halide light-emitting devices exhibit outstanding properties such as high efficiency, high color purity and wide color gamut, their industrial integration generally suffers from the technological complexity of the device’s multilayer structure along with poor heating-induced operating stability. Halide perovskite light-emitting electrochemical cell is a new type of perovskite optoelectronic device that differs from perovskite light-emitting diodes by its simple monolayer architecture. Reported in paper a perovskite light-emitting electrochemical cell composed of a silicon substrate, a multifunctional single-composite perovskite layer (a mixture of perovskite halide microcrystals, a polymer support matrix, and additional cellular ions), and a top contact transparent single-walled carbon nanotube film. Due to the good thermal conductivity of silicon, the device withstands 40% less thermal heating during operation compared to conventional ITO/glass substrates. In addition, when a positive bias is applied to the device, it produces an luminance of over 7000 cd/m2 at 523 nm (green). When a negative bias is applied to the device, it operates as a photodetector with a sensitivity of up to 0.75 A/W (for wavelengths in the blue or UV region), a specific detection of 8.56∙1011 Jones, and a linear dynamic range of 48 dB. The technological potential of such a device is proved by the demonstration of a 24-pixel indicator display as well as the successful miniaturization of the device by the generation of electroluminescent images with the smallest feature less than 50 µm.
Perovskite light-emitting electrochemical cells are a viable alternative to conventional perovskite materials designing light-emitting diode research. Perovskite light-emitting electrochemical cell not only implies having a much simpler architecture and design with a single functional layer replacing multiple active layers, charge separation and transport of the perovskite light-emitting diode, but also perovskite light-emitting electrochemical cell can have all the extraordinary properties of LED, such as high efficiency, high color purity and wide color gamut. The reason why a perovskite light-emitting electrochemical cell is capable of doing that – is entirely different from the operating principle of an LED: when an electrical bias is applied to the device, positive and negative ions moving within the perovskite layer migrate towards the corresponding electrode dynamically forming a structure of pins within the layer. perovskite, which allows effective electron-hole recombination with photon emission! Comprehensive research on reserves for conventional LED technologies is a valuable resource for diversifying the industry opportunity set.
The device reported exhibits outstanding light-emitting and light-detecting characteristics (“dual function”) in addition to increased heating resistance in operation. This was made possible due to the use of silicon substrates in the design of perovskite light-emitting electrochemical cells. The silicon material is one of the stepping stones of CMOS technology – complementary metal-oxide-semiconductor technology – the technology used in the manufacture of all semiconductor chips, displays, etc. The integration of emerging materials such as perovskite materials with silicon brings the R&D community one step closer to obtaining industrial perovskite light-emitting electrochemical cells.
Last but not least, it benefits the wider context of the device design being reported – it is an ITO-free transparent electrode based on single-walled carbon nanotubes. ITO – Indium-Tin Oxide- is a transparent conductive material that is widely used in perovskite photovoltaics and optoelectronics. Indium is a depleting element and, as such, the replacement of ITO with other materials based on the element that is abundant in the earth will help overcome the shortage of indium in the industry.
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A hands-on project of a growing collaboration between Alferov University and ITMO University, both located in St.Petersburg (Russia). The aim of Prof.’s research group. Ivan Mukhin (Laboratory of Renewable Energy Sources) from Alferov University is to broaden the horizons of conventional semiconductors (Si and III-V group semiconductors) electronics and optoelectronics with innovative device designs (flexible and elastic electronics) and with original ideas in the synthesis and manufacture of materials (utilizing low-dimensional structures such as semiconductor nanowires). Prof. research group Sergey Makarov (Hybrid Nanophotonics and Optoelectronics Laboratory) from ITMO University not only focuses on fundamental research in the field of perovskite halide photonics and non-linear optics but also strives in the development of photovoltaic and optoelectronic perovskite devices, their stability improvement and industrial integration.
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Opto-Electronic Advances (OEA) is a high-impact, open access, peer reviewed monthly SCI journal with an impact factor of 8,933 (Journal Citation Report for IF2021). Since its launch in March 2018, OEA has been indexed in SCI, EI, DOAJ, Scopus, CA, and ICI databases over time and expanded its Editorial Board to 36 members from 17 countries and territories (h-index average 49).
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